WG60N65MFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO247 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.
- Maximum junction temperature 175 °C
- Positive Temperature efficient for easy paralleling
- Very soft, fast recovery anti-parallel diode
- Smooth & Optimized switching
- EMI Improved Design
- Motor control
- PFC
- UPS
- Resonant converters
- Mid to high switching frequency applications
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WG60N65MFW1 | VCE | collector-emitter voltage | Tj ≥ 25 °C | 650 | V | ||
IC | collector current | limited by Tj(max); TC = 100 °C | 60 | A | |||
VCE(sat) | collector-emitter saturation voltage | VGE = 15 V; IC = 60 A; Tj = 25 °C | 1.7 | 2.1 | V |
Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
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Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
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Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
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Chemical Content - WG60N65MFW1
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