WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.
- Positive Temperature efficient for Easy Parallel Operating
- High Current Capability
- Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
- EMI Improved Design
- Solar Inverter
- UPS
- PFC
- Converters
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WG50N65DHJ1 | VCE | collector-emitter voltage | Tj ≥ 25 °C | 650 | V | ||
IC | collector current | limited by Tj(max); TC = 100 °C | 50 | A | |||
VCE(sat) | collector-emitter saturation voltage | VGE = 15 V; IC = 50 A; Tj = 25 °C | 1.25 | 1.55 | V |
Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
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Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
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Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
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Chemical Content - WG50N65DHJ1
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